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| NJL5901R-1 COBP PHOTO REFLECTOR GENERAL DESCRIPTION NJL5901R-1 is the compact surface mount type photo reflector, which miniaturized outside dimension compared with the current COBP reflector, NJL5901R. Compared with the NJL5901R, the mounting area of NJL5901R-1 is reduced to 54%. Moreover, the output current is 400A typ. and is raised 180% compared with the NJL5901R. FEATURES * Miniature, thin package : 1.3mm x 1.6mm x 0.6mm * High output : 400A typ. * Pb free solder re-flowing permitted : 260C, 2times 0.15 OUTLINE (typ.) 1.6 (0.42) 0.15 Unit : mm 0.07 (0.29) 0.45 0.1 0.45 0.1 (0.42) (0.42) 1.3 0.4 0.1 APPLICATIONS * Detecting the location of Lens unit for Cellular Phone's camera module * Detecting the location of CD/DVD optical pickup head * Detecting the rotation of various motors * Paper edge detection and mechanism timing detection of facsimile, copy machine etc 0.6 0.15 0.07 E PTx Center A LED Center 0.2 0.2 0.1 0.07 0.07 * Built-in visible light cut-off filter 0.4 0.1 C K 0.65 0.35 0.1 0.65 A:anode K:cathode C:collector E:emitter 0.4 0.36 0.4 PCB pattern ABSOLUTE MAXIMUM RATINGS (Ta=25C) PARAMETER Emitter Forward Current (Continuous) Reverse Voltage (Continuous) Power Dissipation Detector Collector-Emitter Voltage Emitter-Collector Voltage Collector Current Collector Power Dissipation Coupled Total Power Dissipation Operating Temperature Storage Temperature Reflow Soldering Temperature SYMBOL IF VR PD VCEO VECO IC PC Ptot Topr Tstg Tsol RATINGS 30 6 45 16 6 10 25 60 -20 to +85 -40 to +85 260 UNIT mA V mW V V mA mW mW C C C ELECTRO-OPTICAL CHARACTERISTICS (Ta=25C) PARAMETER Emitter Forward Voltage Reverse Current Capacitance Detector Dark Current Collector-Emitter Voltage Coupled Output Current Operating Dark Current *1 Rise Time Fall Time SYMBOL VF IR Ct ICEO VCEO IO ICEOD tr tf TEST CONDITION IF=4mA VR=6V VR=0V,f=1MHz VCE=10V IC=100A IF=4mA,VCE=2V,d=0.7mm IF=4mA,VCE=2V IO=100A,VCE=2V,RL=1K,d=0.7mm IO=100A,VCE=2V,RL=1K,d=0.7mm MIN TYP MAX 1.3 10 UNIT V A pF A V A A s s -- -- -- -- 16 -- -- 25 -- 0.2 -- -- -- -- 30 30 -- 700 5 280 -- -- -- -- -- *1 Icoed may increase according to the periphery situation of the surface mounted product. 4-Mar-05 -1- NJL5901R-1 OUTPUT CURRENT TEST CONDITION The infrared signal from LED is reflected at the aluminum surface DARK CURRENT TEST CONDITION Light Sealed Dark Box Aluminum Evaporation Surface IF IF Io VCE VCE Iceod RESPONSE TIME TEST CONDITION Aluminum Evapolation Surface RD P.G IF RL Io V+ 0.7mm Input 90% Output 10% OSC tr tf EDGE RESPONSE TEST CONDITION l=0mm l=0mm 0.7mm Aluminum Evaporation Surface Aluminum Evaporation Surface 0.7mm Direction X Direction Y 4-Mar-05 -2- NJL5901R-1 Power Dissipation vs. Temperature 100 90 80 Power Dissipation P(mW) 70 60 50 40 30 20 Forward Current IF(mA) 50 45 40 35 30 25 20 15 10 Forward Current vs. Temperature Total Power Dissipation Collector Power 10 0 0 20 40 60 80 100 Ambient Temperature Ta(C) Dissipation 5 0 0 20 40 60 80 100 Ambient Temperature Ta(C) TYPICAL CHARACTERISTICS Forward Voltage vs. Forward Current 100 1.6 Forward Voltage vs. Temperature 1.4 Forward Current IF(mA) Forward Voltage VF(V) IF=30mA 10 1.2 IF=4mA 1 1 0 1 Forward Voltage VF(V) 2 0.8 -40 -20 0 20 40 60 80 100 Ambient Temperature Ta(C) Dark Current vs. Temperature 10000 1000 100 10 Operating Dark Current Iceod(A) 10 Operating Dark Current vs. Temperature Dark Current Iceo(nA) 1 VCE=10V 1 0.1 0.01 IF=4mA , VCE=2V 0.1 0.001 -40 -20 0 20 40 60 80 100 Ambient Temperature Ta(C) 0.01 -40 -20 0 20 40 60 80 100 Ambient Temperature Ta(C) 4-Mar-05 -3- NJL5901R-1 Output Current vs. Forward Current (Ta=25C) 1500 1400 Relative Output Current Io/Io(25C)(%) 1300 1200 1100 Output Current Io(A) 1000 900 800 700 600 500 400 300 200 100 0 0 2 4 6 8 10 Forward Current IF(mA) 0 -40 -20 0 20 40 60 80 100 Ambient Temperature Ta(C) 100 120 Output Current vs. Temperature 80 60 40 IF=4mA , VCE=2V 20 VCE=2V , d=0.7mm Output Characteristics (Ta=25C) 1500 1400 1300 1100 Output Current Io(A) 1000 900 800 700 600 500 400 300 200 100 0 0 1 2 3 4 5 Collector-Emitter Voltage Vce(V) 0 0.1 Collector-Emitter Voltage Vce(V) 1200 0.4 Vce Saturation (Ta=25C) 0.5 IF=10mA IF=8mA 0.3 IF=6mA Io=500A Io=400A Io=300A Io=100A 0.2 IF=4mA IF=2mA 0.1 1 Forward Current IF(mA) 10 Output Current vs. Distance (Ta=25C) 120 Output Current vs. Edge Distance (Ta=25C) 120 IF=4mA , VCE=2V , d=0.7mm Relative Output Current Io/Io(max.)(%) 100 Relative Output Current Io/Io(max.)(%) 100 IF=4mA , VCE=2V 80 80 60 60 Direction X 40 40 Direction Y 20 20 0 0 1 2 3 4 5 Reflector Distance d(mm) 0 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 Edge Distance l(mm) 4-Mar-05 -4- NJL5901R-1 Spectral Response (Ta=25C) 120 1000 Switching Time vs. Load Resistance (Ta=25C) 100 VCE=2V Relative Response (%) Switching Time t(s) 80 100 tr tf 60 td 10 40 20 VCE=2V , Io=100A 0 500 1 600 700 800 900 1000 0.1 1 Load Resistance RL(k) 10 Wavelength (nm) 4-Mar-05 -5- NJL5901R-1 PRECAUTION FOR HANDLING 1. Soldering to actual circuit board Soldering condition The surface temperature of plastic package is lower than 260 C. Soldering Method 1) Reflow Method Soldering to be done within twice under the recommended condition mentioned below f 260C 230C 220C 180C 150C e d a : Temperature ramping rate b : Pre-heating temperature time c : Temperature ramping rate d : 220C or higher time e : 230C or higher time f : Peak temperature g : Temperature ramping rate : 1 to 4C/s : 150 to 180C : 60 to 120s : 1 to 4C /s : Shorter than 60s : Shorter than 40s : Lower than 260C : 1 to 6C /s The temperature of the surface of mold package Room Temp. a b c g 2) Reflow Method (In case of infrared heating) The temperature profile is same as the above Avoid direct irradiation to the plastic package because it may absorb the Infrared Radiation and its surface temperature will be higher than the lead. 3) The other method Avoid rapid heating up like dipping the devices directly into the melting solder or vapor phase method (VPS). Solder the device in short time as soon as possible. If the device is heated and kept in high temperature for longer time, its reliability would be affected. 2. Cleaning Avoid washing the device after soldering by reflow method. 3. Attention in handling 1) Treat not to touch the lens surface. 2) Avoid dust and any other foreign materials on the lens surface such as paint, bonding material, etc. 4. Storage Mount the device as soon as possible after opening the envelope. In order to prevent from degradation by the moisture at the reflow process, the device is contained in deaeration packaging. 4-Mar-05 -6- NJL5901R-1 NJL5901R-1 Taping Specification 1. Taping Size 1) Carrier tape is used with Styrene type Carbonated Plastic. 2) Cover tape is used with electro statistically prevention treated Polyester type tape. 3) Product taping direction is to place the index mark against the pull out direction of the tape as in the drawing. (TE1) Pull out direction of tape 2.0 4.0 1.5 0.25 1.75 UNIT : mm 1.8 3.5 1.45 4.0 8.0 0.85 Cover Tape Carrier Tape 2. Taping Strength Pull up the cover tape from the carrier tape, and when the opening angle comes around 10 to 15, and the peeling-off strength is to be within the power of 20 to 70g. 3. Packaging 1) The taped products are to be rolled up on the taping reel as on the drawing. 2) Rolling up specification 2-1) Start rolling : Carrier tape open space more than 20 Pieces. 2-2) End of rolling : Carrier tape open space more than 20 Pieces, and 2 round of reel space at the cover tape only. 3) Taping quantity : 2,000 Pieces. 4) Seal off after putting each reels in a damp proof bag with silica gel (3 bags). Label 8.5 13 [CAUTION] The specifications on this databook are only given for information , without any guarantee as regards either mistakes or omissions. The application circuits in this databook are described only to show representative usages of the product and not intended for the guarantee or permission of any right including the industrial rights. 60 180 4-Mar-05 -7- |
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